RF GaN Semiconductor Device Market 2020 Opportunities, Key Trends, Size, Latest Innovations, Analysis and Forecast 2027

 Market Research Future published a research report on “RF GaN Semiconductor Device Market Research Report - Global Forecast till 2027” – Market Analysis, Scope, Stake, Progress, Trends and Forecast to 2027

Market Analysis

Market Research Future (MRFR) predicts the global RF GaN semiconductor device market to reach USD 1,607.23 million at a CAGR of 20.3% from 2019–2025 (forecast period).

RF GaN is one of the new technologies for power electronics applications that require high-power density RF performance. RF-based power amplifiers are used in the transmitter circuitry of a variety of products and services. Because GaN has a broad bandgap, it has a strong breakdown field, allowing GaN devices to operate at higher voltages than conventional semiconductor devices.

The RF GaN semiconductor device is critical in the wireless infrastructure for cell phones, radio and television broadcasting, MRI machines, radar, space and satellite communications, and military communications. Furthermore, the rising demand for RF GaN devices in IT and telecommunications equipment would be a major driver of the market throughout the projection period. Gallium nitride (GaN) is currently widely employed to improve the performance of numerous devices in radio frequency (RF) and microwave applications. GaN is roughly 10% more efficient than laterally diffused MOSFET (LDMOS), resulting in significant energy savings at power levels of 600W or more, which is a major factor pushing the RF GaN Semiconductor Device Market. Furthermore, businesses are substantially investing in the development of novel devices for a variety of applications. NXP Semiconductors, for example, has used RF GaN semiconductor devices to develop numerous wireless applications such as HF (high frequency), VHF (very high frequency), and UHF (ultra-high frequency) radar (1–1000 MHz), S-band radar, avionics, and L-band radar.

Market Segmentation

The world RF GaN Semiconductor Device Market segment study is based on Applications, Material, and End-User. The material based segment of the RF GaN semiconductor market are GaN-On-Diamond, GaN-On-Sic, and GaN-On-Silicon. The wide range of application of GaN-On-Silicon can gain considerable traction for the market across the assessment period.

The application based segments of the RF GaN Semiconductor Device market are power storage, wireless infrastructure, satellite communication, and PV inverter among others. The wireless infrastructure segment can generate considerable revenue for the GaN semiconductor market. 

The End-User based segment of the RF GaN Semiconductor Device market are IT & telecom, automotive, consumer electronics, aerospace & defense among others

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Detailed Regional Analysis

The rise in investment made by reputed tech companies in the developed regions of North America can cause the RF GaN Semiconductor Device market to rise at a high pace across the assessment period. MRFR study shows that the US is expected to head the regional market. The presence of some of the largest multinational corporations in the region that include Analog Devices Inc., Raytheon Company, and Cree, Inc. can prompt the expansion of the regional market. In Europe, the driver for the RF GaN market are similar. In addition, the high utility of RF GaN Semiconductor Device by potential end-users, consumer electronics, military & defense, and IT & telecom among others are likely to bolster Europe RF GaN semiconductor market in the years to come. UIn APAC, the rise in the investment by telecom companies to establish viable infrastructure for 5G technology can prompt the expansion of the RF GaN market across the assessment period.

Key Players

MRFR registered some reputed players operating in the RF GaN Semiconductor Device global Market. They are; Robert Bosch GmbH (Germany), Raytheon Company (US), Sumitomo Electric Industries, Ltd (Japan), Toshiba Corporation (Japan), Hitachi, Ltd (Japan), STMicroelectronics (France), Renesas Electronics Corporation (Japan), Infineon Technologies AG (Germany), Panasonic Corporation (Japan), Microchip Technology (US), Mitsubishi Electric Corporation (Japan), Cree, Inc. (US), NXP Semiconductor (Netherlands), ROHM Semiconductors (Japan), Qorvo Inc. (US), Aethercomm Inc.(US), and Analog Devices Inc.(US) among others.

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About Us:

Market Research Future (MRFR) is a reliable firm that undertakes an extensive analysis of markets in various domains. Our teams of research analysts gather relevant data through painstaking primary and secondary research that aims to give clients a complete outlook on markets of their interest. The data is compared against third-party agencies and reputed organizations for estimating valuations and revenue projections.

MRFR’s goal in providing a comprehensive coverage of the market replete with latest trends, niches, developments, and insights can be lucrative for business needs. We aim to push our clients to the forefront by guiding them with astute information for making informed decisions. Our market intelligence can track down key issues in industries and be modified as per the fluctuations in economic scenarios. The reports are customized and offered as per a specific region or country and adhere to latest policies.

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